Application of Seebeck Effect Imaging on failure analysis of via defect

Often localizations for defective interconnects are done during or after some destructive analysis or sample preparation i.e., TIVA, PVC or active probing. As a result, the defect observed could be secondary effect induced during analysis. Therefore, Seebeck Effect Imaging (SEI) technique has been developed to avoid such uncertainty. This technique applies the theory of Seebeck effect and adapted into a Scanning Optical Microscope (SOM) system.