Low-threshold high quantum efficiency 670 nm GaInP/AlGaInP ridge-waveguide lasers

Low-threshold, low-noise GaInP-AlGaInP visible compressively strained QW laser diodes are of great interest for applications like optical storage systems and low-cost, short-range data transmission via plastic optical fiber. In addition to a stable lateral single mode operation even at high injection currents, these applications require a low temperature dependence of the output parameters. The latter is a major problem in the GaInP-AlGaInP material system, since barrier heights for carriers are restricted. We developed a simple self-aligning ridge-waveguide laser process based on ECR-RIE dry etching with an Ar/CCl/sub 2/F/sub 2/ plasma and an additional wet etching step.