IGBT module rupture categorization and testing

The IGBT module rupture phenomenon is characterized through testing and categorized into two separate ratings for each device investigated. A DC link inverter bus fuse is being implemented in most designs as a protective device to minimize extremely high overcurrent faults and power module rupture. The power semiconductor fuses available are optimized for lowest I/sup 2/t let though energy, low forward drop and low insertion impedance. As a foundation of the establishment of selected IGBT module rupture ratings the paper contains the testing of several selected fuses and their I/sup 2/t values under specific conditions of 600 volts DC applied to an inverter grade capacitor bank. The selected fuses are tested together with the IGBT being evaluated for its rupture ratings. The power circuit is by design a low loss, low inductance structure which will result in the delivery of extremely high currents and energy transmission. The IGBT rupture testing is presented into two categories of overcurrent failure and of unclamped voltage failure. The two failure modes result in different values of rupture energy and I/sup 2/t. In conclusion the rupture testing is compared with appropriately sized semiconductor protecting fuses.