High responsivity side illuminated AlGaInAs PIN photodiode for 40 Gbit/s-40 GHz applications

This paper describes the design procedure and experimental results of a high speed and high responsivity multimode AlGaInAs side-illuminated PIN photodiode. Fabricated devices exibit very low dark current (<1 nA) together with a very high responsivity of 0.8 A/W and a frequency cut-off higher than 40 GHz at 1.55 /spl mu/m wavelength.