Analysis of power losses in voltage source converter with new generation IGBTs

This paper introduced the structure of new generation IGBTs(Insulated Gate Bipolar Transistor), such as Trench-Gate + Field Stop(FS) IGBT of Infineon, and Soft-Punch-Through(SPT) and Soft-Punch-Through-Plus(SPT+) IGBT of ABB. It also compared the characteristics. Then this paper calculated and discussed the power losses of voltage source converter(VSC) with these new generation IGBTs. The results showed that using new generation IGBTs can lead to relatively low power losses.