Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs

The correlation of discrete gate and drain current fluctuations is revealed in nanoscaled SiON pFETs and nFETs, demonstrating that discrete trapping and detrapping events in the same single states are responsible of both I_D and I_G random telegraph noise (RTN). The high and low gate current I_G-RTN levels are independent of temperature but the switching rates thermally activated indicating that the trapping and detrapping events are consistent with nonradiative multiphonon theory.