Characterization of parasitics from microwave scattering parameters of semiconductor laser diode

We proposed A novel method for characterizing the parasitics of semiconductor laser diode through measuring its scattering parameters. Experiments are designed and performed using our method, and furthermore, how the parasitic element affects the parasitics of semiconductor laser diodes is investigated. Our method only needs reflection coefficient of semiconductor laser diode to be measured, which is simple due to the developed microwave measurement techniques.