Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications

Silicon Carbide (SiC) is a good candidate for high temperature power electronic applications. To ensure good reliability, packaging materials with a coefficient of thermal expansion (CTE) matching that of SiC are needed. A metallized ceramic substrate based on aluminium nitride (AlN) and molybdenum (Mo) is reported in this paper. This substrate is built using a spark plasma sintering equipment. Results show that a dense Mo layer can be sintered on an AlN plate, with good adhesion, forming a Mo/AlN/Mo structure with well-matched CTEs.