Power transistor models with temperature dependent parasitic effects for SPICE-like circuit simulation

New SPICE-like simulation models for a power MOSFET containing a dynamic link between electrical and thermal component descriptions were described. The designed electro-thermal MOSFET model consists of several parts which represent different transistor behavior at different conditions as reverse bias, avalanche breakdown, thermal burning and others. Modified thermal equivalent circuit diagrams were designed taking into account thermal dependence of thermal resistivity. The possibilities and limitations of the new models are analyzed and presented. An unclamped inductive switching (UIS) test was used for comparison and verification of proper behavior of designed MOSFET model.