Quasi-saturation region model of an NPN−N transistor

A time dependent circuit model of an NPN^-N transistor is described for the simulation of the quasi-saturation region. A Current Induced Base factor is defined from an injection level model of the N^- collector and used to modify the static and dynamic properties of a basic Ebers-Moll model. Curve tracer and time dependent, turn-on characteristics are used to demonstrate the effect of the CIB factor.