LPE Growth and Scintillation Properties of (Zn,Mg)O Single Crystalline Film

Among the direct wide band-gap semiconductors, ZnO is an attractive scintillator for alpha particle monitoring. However, the undoped ZnO has a dominant slow luminescence around 500-600 nm due to lattice defects. In this study, the Mg-substituted ZnO ((Zn,Mg)O) single crystalline films with high crystallinity are investigated. Mg doping is found to improve the lattice order and suppress slow luminescent component around 500-600 nm. (Zn,Mg)O single crystalline films were grown by the Liquid Phase Epitaxy (LPE) method. Alpha-ray excited radioluminescence spectra of (Zn,Mg)O film show only one emission peak around 400 nm and decay time of a few nanoseconds. This emission is assigned to free exciton. Light yield of LPE grown (Zn,Mg)O film is evaluated of about 90% of BGO.