Suppressing temperature rise in AlGaN/GaN HEMT with graphene layers

Numerical study is performed for an effective suppression of temperature rise in AlGaN/GaN high electron mobility transistors (HEMT) using our developed algorithm based on finite element method. Such a HEMT can be fabricated on SiC or other substrates with graphene inserted between the AlGaN and the GaN layers. The effects of both geometrical and physical parameters of the structure on the maximum temperature rise at the top surface of AlGaN layer are examined and compared. It is shown that as the semiconducting graphene has extreme large thermal conductivity in comparison with other semiconductor counterparts, it can be integrated into AlGaN/GaN HEMTs and other SOI active devices as an effective heat removal layer. Under such circumstances, their electrical performance and reliability can be enhanced greatly. Therefore, we are able to say that graphene has great potential in challenging thermal managements of some active devices operating at high temperature, which must be used for the development of some miniaturized system in package (SiP).