Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2 and Si

We studied the influence of the dopant and of the polysilicon substrate on the thermal stability of a thin CoSi₂ layer. To distinguish between the influence of the dopant (As or B) and the effect of the implant in the silicon substrate, also an implantation of silicon was performed on a different sample. A large difference in the silicide thermal stability has been observed and this behavior has been explained with the crystallographic orientation of the underlying silicon substrate and of the silicide layer.