Fast temperature ramping Hg-vapor annealing process for fabrication of Hg-based superconducting thin films

Growth mechanism of superconducting Hg-based cuprate thin films has been studied by changing the sample heating rate in Hg-vapor annealing process. A fast temperature ramping Hg-vapor annealing (FTRA) process has been found to be beneficial to the growth of high quality c-axis oriented epitaxial HgBa/sub 2/CaCu/sub 2/O/sub 6+/spl delta// films with zero-resistance T/sub c/ up to 124 K and HgBa/sub 2/Ca/sub 2/Cu/sub 3/ O/sub 8+/spl delta// films with zero-resistance T/sub c/ up to 130 K on SrTiO/sub 3/ and LaAlO/sub 3/ substrates. The high J/sub c/'s carried by these films makes them promising for many applications.