Analysis of PBG structures using FDTD algorithm

In this paper the Finite Difference Time Domain (FDTD) method has been used for computing the band structure of PBG structures using arrays of dielectric posts which were arranged in triangular manner. The dielectric materials like Silicon (Si), Gallium Arsenide (GaAs), and Sapphire (Si₃N₄) were considered for the numerical computation and the obtained numerical results of 2-D triangular lattice for TE mode has been compared with the plane wave expansion (PWE) method. The sources of error in FDTD calculations are well understood, and can be bounded to permit accurate models for a very large variety of electromagnetic problems. The global band diagram for silicon has also been discussed with respect to the filling fraction (r/a) values.