2D finite elements electro-thermal modeling for IGBT: Uni and multicellular approach

In this paper, insulated gate bipolar transistor (IGBT) models in the literature are reviewed, analyzed, and classified in different categories. We compare unicellular and multicellular modeling for the hard-switching between finite elements electro-thermal simulations applied on a silicon power transistor and we show the advantages of multicellular modeling applying on a planar gate non punch through IGBT (PG-NPT-IGBT). It appears that degradation of one or more cells shows intercellular electrical phenomena which can lead to failure of components.