Effect of the dopant segregation layer on the static characteristics of Schottky-barrier n-MOSFETs

This paper presents a detailed investigation of the impact of dopant segregation (DS) on the static characteristics performance of n-type 120-nm ultrathin-body Schottky-barrier (SB) silicon-on-insulator MOSFETs. The optimization of the dopant concentration (N_DOP) and lateral extension (L_DOP) of the DS layer is studied. A careful choice of these quantities reduces the effective potential barrier height at the Schottky junctions, boosting the drive current and transconductance. Important effects are also observed in internal quantities related to electronic transport like velocity, energy and carrier concentration within the channel. These enhancements in SB-MOSFET devices featuring DS layers confirm the suitability of this technology to help extending the roadmap for Silicon MOS devices.