Identification of hydrogen incorporation into GaAsN by growth with deuterated precursors

The hydrogen that constitutes N-H in GaAsN grown by the chemical beam epitaxy (CBE) equally comes from the nitrogen precursors (monomethylhydrazine) and arsenic precursors (trisdimethylaminoarsenic). The ratio of the contributions from those two precursors to the N-H constitution varied with the growth temperature of GaAsN. Further, the temperature dependence was different in each local vibration mode (LVM) of N-H.