Ellipsometry analysis of a-Si:H/SnO2:F textured structures

Spectroscopic ellipsometry (SE) has been applied successfully to characterize textured SnO₂:F substrates as well as a-Si:H layers formed on textured SnO₂:F substrates. For the textured SnO₂:F substrates, we demonstrates that the carrier concentration and mobility can be extracted optically, in addition to the detailed film structure. Moreover, we have developed a new optical model that allows the complete evaluation of non-uniform a-Si:H/SnO₂:F textured structures. The a-Si:H/SnO₂:F textured structure deduced from SE shows remarkable agreement with that observed from transmission electron microscopy (TEM). The SE analysis method developed in this study can be applied further to establish high-precision characterization of large-area a-Si:H modules.