Effect of crystalline anisotropy in AMRAM cells

The effect of crystalline anisotropy on the device signal and edge switching thresholds of both NiFeCo and NiFe anisotropic magnetoresistive random access memory (AMRAM) cells has been simulated. The NiFe device demonstrated a greater signal range with an edge switching threshold of 5 Oe, while the NiFeCo device showed a smaller range of signal but with an edge switching threshold of 13 Oe.