A wideband LNA with an excellent gain flatness for 60 GHz 16QAM modulation in 65 nm CMOS

In 60 GHz radios, at least 9 GHz flat gain is needed for the whole band for 16-QAM modulation. A 23 GHz 3 dB bandwidth, 6.3 dB to 17.5 dB variable gain, less than 4.3 dB NF, -7.7 dBm IIP3, four-stage common source LNA is proposed in this paper. The LNA uses guided micro-strip transmission line to realize simple input and inter-stage impedance matching networks. The prototype LNA is implemented in 65 nm CMOS with a chip area of 0.354 mm² including RF pad.