A new IGBT circuit model for SPICE simulation

A new compact model for power IGBTs is presented in this paper. In the proposed approach, the wide base bipolar transistor of the IGBT is modeled by using a Laplace-transform solution of the ambipolar diffusion equation. The obtained nonquasi-static BJT model is coupled with a proposed short-channel MOSFET model, to give the overall IGBT behavior. The developed IGBT model is implemented as a subcircuit in the PSPICE simulator, resulting in good accuracy and reduced CPU time.