Performance evaluation of a 32-nm CNT-OPAMP: Design, characteristic optimization and comparison with CMOS technology

In this paper, we present a simplified design, characteristic performance evaluation and comparative analysis for a Carbon Nanotube-based Operational Amplifier (CNT-OPAMP), using a circuit-compatible compact model for the intrinsic channel region of the MOSFET-like single-walled Carbon Nanotube Field-Effect Transistors (CNFETs). The study makes a simulation-based assessment on the design and performance analysis of a CNFET-based CMOS-OPAMP and compares the result to that of the conventional Silicon-based OPAMP for 32nm technology. The comparative analysis from our study shows a promising increase in operation Bandwidth by 33.8% and in Gain-Bandwidth product (GBP) by 105.7% for the CNFET-OPAMP, with a switching speed faster by over 200% and a huge reduction in power consumption by over 600 times. It also shows a considerably good noise performance with an increment of CMRR by a factor of two. The results obtained in our study suggest that the CNT-OPAMP has a promising potential for low-power high-speed applications in nanoelectronic circuits.