MOSFET substrate dopant profiling via inversion layer-to-substrate capacitance

In this paper the new method for substrate dopant profiling of MOSFETs based on the differential capacitance between inversion layer of transistor and the substrate is described and demonstrated. It has the advantage that effective deep depletion of the substrate is achieved by using substrate reverse bias, thus avoiding the difficulties associate with normal pulse MOS CV profiling. Effective channel length required for profiling is also extracted from the capacitance data of transistors with different drawn lengths.