Improved efficiency of photovoltaic cell based on indium-phosphide-oxide, indium-phosphide, indium-gallium arsenide and indium-gallium-antimonide

Multi-junction photovoltaic cell of III-V alloyed semiconductor material with high optical sensitivity and ideal combination of band-gaps promotes high photon absorption. Using multiband-gap system and splitting the solar spectrum towards matched spectral sensitivity we can get higher efficiency of the solar cell. Also, higher photon absorption of the photovoltaic cellis achieved when anti-reflective coating (ARC) is applied. This ARCreduces the amount of photon reflection as well as transmission of the photon incident on the solar cell. In this paper, we have proposed a new multi-junction photovoltaic cell based onInPO/InP/InGaAs/InGaSb and has performed comparison of photon absorption, photon reflection and photon transmission with existing high efficient multi-junction solar cell. The result of our cell, InPO/InP/InGaAs/InGaSb shows much better photon absorption in the range of 400nm–774nm of the solar spectrum, with photon absorption of 64.4%, 95.4%, 95.1%, and 81.6% at 400nm, 500nm, 600nm, and 700 nm respectively.