Simulation of InGaN/GaN MQW's laser diodes using micro/nano multi-quantum barriers

A self-consistent 2D laser modeling is used to study the effect of InGaN/GaN multi-quantum barriers (MQBs) as EBL for the design and development of high power laser diode. Analytical comparisons using MQBs as EBLs have been performed. Compared to non-EBL and conventional AlGaN as EBL, noticeable improvement in the carrier confinement in the active layer and the optical gain has been obtained by using optimized MQBs structures. This is attributed due to an effective control on the spillover electrons from the junction layer into p-doped region. We found that the threshold current and the optical output power of the structures with MQBs and AlGaN as EBL exhibit improved performance at higher injected currents.