Study of Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism

One-dimensional nanostructures have attracted extensive interest due to their potential uses in nanoelectronic and optoelectronic devices and fundamental importance for the study of size-dependent chemical and physical phenomena [1-3]. Silicon nanowires (SiNWs) were synthesized from pure silane gas as precursor and Au catalyst at a low temperature of 400°C. The SiNWs were grown on Si (111) substrates using very high-frequency plasma enhanced chemical vapor deposition via a vapor-liquid-solid mechanism.