Silicidation using nickel and Dysprosium stack on Si(100): NiSi2 formation and impact on Schottky Barrier Height

NiSi₂ formation was report for the ΦBⁿ reduction for Dy-incorporated Ni silicides. NiSi₂ was found out to be potential contact material for the achievement of low ΦBⁿ in field effect transistors at nm technology nodes (n-FETs). X-ray diffraction (XRD), secondary ions mass spectroscopy (SIMS) depth profile, high-resolution transmission electron microscopy (TEM) were used for analyses.