High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET

In this paper we present a 55 nm gate length In
_0.53
Ga
_0.47
As MOSFET with extrinsic transconductance of 1.9 mS/μm and on-resistance of 199 Ωμm. The self-aligned MOSFET is formed using metalorganic chemical vapor deposition regrowth of highly doped source and drain access regions. The fabricated 140 nm gate length devices shows a low subthreshold swing of 79 mV/decade, which is attributed to the described low temperature gate-last process scheme.