Low-Temperature Organic (CYTOP) Passivation for Improvement of Electric Characteristics and Reliability in IGZO TFTs

We proposed and fabricated amorphous indium- gallium-zinc-oxide thin-film transistors (TFTs) employing a novel organic-passivation layer (CYTOP) that results in low damage and good dielectric quality. The TFT with the CYTOP- passivation layer successfully exhibited a relatively good electrical characteristic (μ
_sat
= 12.3 cm
²
/V · s) compared with that (μ
_sat
= 5.8 cm2/V · s) of the TFT with a SiOx-passivation layer. The CYTOP-passivated device exhibited relatively good stability (ΔV
_TH
: 2.8 V) under positive bias-temperature stress while the TFTs with the SiOx-passivation layer showed a 3.3-V ΔV
_TH
shift, respectively. The CYTOP passivation was performed at low annealing temperature (180
^ο
C), and therefore, it is a good candidate for advanced flexible displays.