GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects

The extraction of an accurate model for GaN HEMT devices is of fundamental importance for high-power amplifier design. In particular, the model should be able to reproduce the microwave device behaviour under realistic operating conditions. In light of that, we present a technique for extracting a large-signal GaN HEMT equivalent circuit, which includes both low-frequency dispersive phenomena and high-frequency non-quasi-static effects.