Dielectric measurements and characterization of impurities of photovoltaic cell materials at millimeter and THz waves

Transmittance, Refractive Index, Absorption coefficient, Real and Imaginary part of complex dielectric permittivity data for several Silicon, Silicon Carbide, Gallium Arsenide, Cadmium Telluride and Copper Indium Selenide specimens were measured using Dispersive Fourier Transform Spectroscopy and Free Space Quasi-optical Spectrometer powered by several Backward Wave Oscillators for the characterization of photovoltaic cell materials at Millimeter and THz Waves. Precision measurements easily identifies impurities present in these materials. Data for several silicon carbide (SiC) specimens and powdered Cadmium Telluride specimen over a broad millimeter wave range are shown.