On-chip process and temperature compensation and self-adjusting slew rate control for output buffer

A novel process corner detection technique as well as process and temperature compensation method for sub-2×VDD output buffer is proposed. The threshold voltage (Vth) of PMOSs and NMOSs varying with process and temperature deviation could be detected, respectively. By adjusting output currents, the slew rate of output signal could be compensated over 117 %. The maximum data rate with compensation is 120 MHz in contrast with 95 MHz without compensation, which is measured on silicon with an equivalent probe capacitive load of 10 pF.