Thermal annealing action on the capacity-voltage and siemens-voltage characteristic Ga2O3-GaAs structures

Thin films of gallium oxide have been deposited in vacuum on the GaAs substrates by thermal evaporation of powder Ga2O3. The capacity-voltage and siemens-voltage characteristic of Ga2O3-GaAs structures were investigated. It was shown that the greater the action time of high-temperature treatment in the flow of inactive gas (Ar), the lower the capacitance of the dielectric and thus lower permittivity (ε) of Ga2O3. This phenomenon can be explained by the change structure of Ga2O3 and its reconfiguration in the more conductive phase with a small quantity of the dielectric constant. The amount of surface-states density at the interface of annealed MOS structures decreases to 1·10¹² cm⁻² eV⁻¹.