Use of modified operating mode of gallium arsenid Gunn diodes in the 35–47 GHz millimetre-range generators

Impedance and operating temperature of Gunn diodes (GD) used in the modified mode (MM) are the same as in the transit-time mode. The MM may be realized in GD with the thin base layer (L<1.5μm), where the value of strong field domain equates, or exceeds, the base length. Extended frequency range and high efficiency of GD working in MM have allowed using GD efficiently in the following types of GD generators (GDG): GDG with output frequency Fout=35GHz (with tuning range 1GHz) with output power Pout>120mW, Ioper=0.5–0.55A and Uoper=4.5–5V; GDG with Fout=37GHz with Pout>140mW, Ioper<0.7A and Uoper<6V; and GDG with Fout=47GHz with Pout>100mW, Ioper=0.5–0.55А and Uoper=4.5–5V.