Influence of external electric field on two-wave mixing feature in Ce: KNSBN crystal

We studied the influence of external electric field on two-wave mixing feature in a Ce: KNSBN crystal using a non simultaneous readout device on the best writing conditions (with best polarization of writing beam). The effective gain and diffraction efficiency of two-wave mixing increased as well as the response time decreased as positive electric field increased applied along the c-axis of the crystal. The behaviors of two-wave mixing features mentioned were also observed in a negative electric field range of 0~2000V/cm, but the effective gain began to decrease while the negative electric field was increased upon 2000V/cm, the response time increased as well.