Experimental study of power module with SiC devices

This paper studies the performance of a newly designed 1200V/60A three-phase SiC power module based on parallel SiC JFETs and diodes. The conduction and the switching performance are tested from room temperature to 150°C. The switching speed of the module increases when temperature rises. In the switching performance test, the gate driver speed could bring false peak in turn-off waveform. The experimental results show that the false peak is cause by Differential-mode (DM) noises but not Common-mode (CM) noises. Finally the losses and efficiency of this power module are evaluated.