A 18GHz to 27 GHz low noise amplifier with improved TSMC inductor module

This paper presents a wideband low noise amplifier by using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 um CMOS process for K-Band application. We use active diode to improve linearity, and improve TSMC inductor module by advanced design system momentum. The measurement results show that the input return loss is less than −8 dB, output return loss is less than −13.4 dB, the gain is 4.8 dB, the minimum noise figure is 4.1 dB, and the power consumption is 16.4 mW. The die area including pads is 0.75 mm².