MOCVD growth and characterization of Pb-based ferroelectric thin films

Pb-based ferroelectric thin films such as PbTiO/sub 3/, Pb(Zr,Ti)O/sub 3/ (PZT), (Pb,La)(Zr,Ti)O/sub 3/ (PLZT) and Pb(Zr,Ti,Nb)O/sub 3/ (PZTN) were successfully prepared by MOCVD. A variety of experiments were performed to demonstrate the advantages of the MOCVD process. The advantages of MOCVD, including a high degree of controllability of the film composition, crystalline structure and electrical properties, are reviewed. The variation in the film thickness of PZT film on a 8 inch wafer was /spl plusmn/1.2%. The electrical properties of PZT films grown on Ir and IrO/sub 2/ electrodes were also described. The step coverage characteristics were investigated and good step coverage figure of 74% for PZT films on SiO/sub 2//Si was also obtained. The possibility of scaling up the process to commercial-based production was also investigated and PZT films with a high uniformity in the film component of /spl plusmn/1.1%, a film thickness of /spl plusmn/1.5% and a dielectric constant of /spl plusmn/5% were obtained on a 6 inch wafer.