New cathode structures of Si-based field emitter arrays

New cathode structures of Si-based field emitter array have been proposed to improve the emission uniformity in the field emitter display. The key idea is to separate the cathode electrode and the emitter array in pixel in order to control the emission current by a metal-oxide-semiconductor field-effect transistor (MOSFET) which is simply formed between these by adding a photolithography step and an implantation step to adjust the threshold voltage of MOSFET. Two types of cathode structures are considered. One structure is to control emission current by a MOSFET and the other is to use a MOSFET as an "active resistor". The measurement and simulation results showed the possibility of improvement of emission current uniformity.