About a change of the threshold voltage at nanostructure formation in the scanning tunneling microscope

It is shown that the process of nanostructure formation is determined in many respects by parameters of the electrical circuit used in the STM . The hills formation probability from the applying voltage pulse U/sub pulse/ for various quantities of an impedance of the preliminary amplifier (PA) and for various quantities of additional resistor R/sub x/ is investigated. A change of the impedance PA is carried out by the additional capacity C/sub x/. This capacitor shunts an entering impedance PA. Connection C/sub x/ results in a change of a threshold voltage U/sub th/ of nanostructure formation. The threshold voltage decreases with a reduction of an entering impedance (increase C/sub x/). Such behaviour of U/sub th/ argues for the mechanism of thermal expansion tip.