Progress in development of the 3.5 kV high voltage IGBT/diode chipset and 1200 A module applications

A 3.5 kV IGBT/diode chipset is presented with a large safe operating area for 1200 A module applications. The IGBT cell design is optimized with respect to a low saturation voltage and a low short circuit current and the carrier modulation of the diode bases on emitter controlled principles. The turn on, turn off and short circuit ruggedness is experimentally proofed for 2.5 kV circuit voltage and 125/spl deg/C temperature. The turn off behavior is performed for the twofold nominal current of 2.4 kA and the short circuit ruggedness is verified for a period over 20 /spl mu/s. The turn on and turnoff energies show a linear dependence with the collector current.