Carrier injection enhancement effect of high voltage MOS devices-device physics and design concept

IEGTs are one of the promising candidates for replacing GTOs in high voltage applications in 4.5 kV range. The injection enhancement effect of IEGT structure with the deep trench MOS gate and/or the wide cell design successfully reduces the voltage drop in the N-base. In this paper, we discuss the device physics and design concept of the injection enhancement effect for not only the trench structure but also the planar structure.