Measurements and simulations of excess carrier distributions in 3.3 kV IGBTs during static conditions and turn-on

A careful sample preparation technique and optical alignment allowed depth- and time-resolved free carrier absorption measurements of excess carrier distributions in the n-base of 3.3 kV Si IGBTs. Measurements were performed under static equilibrium and turn-on for current densities in the range 10-50 A/cm/sup 2/ for temperatures in the interval 35-150 /spl deg/C. The correspondence with numerical simulation results was qualitatively good, but with relatively large quantitative discrepancies.