All solid source molecular beam epitaxy using valved cracking cells

Uniform growth of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ lattice matched to InP is demonstrated with molecular beam epitaxy using all solid sources. Elemental indium and gallium, and arsenic and red phosphorus in conjunction with valved cracking cells are utilized as column III and V sources. Photoluminescence emission measurements show better than 1% reproducibility and a best case wavelength uniformity of 6.5 nm for the quaternary. Fabry-Perot cavity, multi-quantum well, 1.3 /spl mu/m emission lasers having excellent light-current characteristics were fabricated. The best devices show a transparency current density as low as 55 A/cm/sup 2/ per well and slope efficiency greater than 0.5 W/A.