Rapid thermal MOCVD of InGaAs/InP multilayers

High quality InGaAs/InP multilayers have been grown by means of rapid thermal low pressure metalorganic chemical vapor deposition (RT-LPMOCVD), using tertiarybutylphosphine (TBP) as phosphorous source and tertiarybutylarsine (TBA) as arsenic source. The undoped featureless films exhibited an excellent morphology with a narrow X-ray peak of 30 arcsec for InGaAs layer on RT-LPMOCVD grown InP, reflecting a lattice mismatch of 0.02%. A test structure of three quantum well lattice matched InGaAs/InP structure (/spl ap/50 /spl Aring/ width of each layer) were grown following determination of the optimum growth parameters for InGaAs and InP layers.