Influence of dopant species on electron mobility in InP

We present a theoretical reassessment of electron mobility in doped InP with respect to different doping species. Using Thomas-Fermi theory in the energy functional formulation we describe the charge density of the individual impurity ion. Analytical expressions for the scattering rate are calculated based on a variational expression of Schwinger. Employing these results in a Monte Carlo calculation we find no significant dependence of mobility on doping species up to 10/sup 18/ cm/sup -3/. For higher concentrations an increasing difference is observed which reaches 25% at 10/sup 19/ cm/sup -3/ for Si and Te doping.