AlInAs/InGaAs long-period-superlattice resonant-tunneling transistor (LPSRTT) prepared by MOCVD

We have demonstrated a new GaInAs/AlInAs long-period-superlattice resonant-tunneling transistor (LPSRTT) with 20-period i-AlGaAs/n/sup +/-GaInAs superlattice. The good transistor performances are obtained both 300 K and 77 K. Furthermore, a significant N-shaped NDR phenomenon resulting from resonant tunneling through the superlattice is obtained in the studied LPSRTT device at 77 K.