Low threshold aluminium free 808 nm lasers grown by solid source molecular beam epitaxy

We report on 808 nm wavelength lasers grown by solid source molecular beam epitaxy. These tensile strained GaInP-GaInAsP single quantum well lasers exhibited a low threshold current density of 230 A/cm/sup 2/ with a cavity length of 2 mm. A 1 mm long device launched 2 W CW output power with a wallplug efficiency of nearly 50%. The measured lasing characteristics compare favorably to those of 808 nm lasers grown by other growth techniques.