High frequency noise in manufacturable carbon nanotube transistors

HF noise parameters were measured and modeled for the first time for wafer-scale manufacturable CNTFETs. These first multi-tube multi-finger CNTFETs exhibit still relatively high values for the minimum noise figure (NF
min
= 3.5 dB at 1 GHz). Based on detailed compact modeling, the origin of this noise can be explained by the existence of the parasitic network and metallic tubes.